Wire bond degradation under thermo- and pure mechanical loading
Publisher
Elsevier
Source
Microelectronics Reliability, 76–77(September 2017), 373-377
Date Issued
2017-09
Author(s)
Pedersen, Kristian Bonderup
Nielsen, Dennis A.
Khatibi, Golta
Iannuzzo, Francesco
Popok, Vladimir N.
Pedersen, Kjeld
Abstract
This paper presents a fundamental study on degradation of heavy Al bond wires typically used in high power modules. Customized samples are designed to only consist of Al bond wires on standard Si diodes. These samples are subjected to pure mechanical and passive thermal cycling to investigate the bond degradation behavior on a simple system as well as compare these two test methods. Although an appreciable difference in fracture behavior is observed between these two methods, both provide correlation between the number of cycles and degree of degradation, especially in the case of the passive thermal test. To enable investigation of degradation rate a large number of bond interfaces is analyzed and they are found to follow conventional accepted fracture laws like Paris-Erdogan. With additional work this could enable the possibility of obtaining empirical parameters to be used in actual physics based lifetime laws.
Type
Wissenschaftlicher Artikel