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    Bond Wire Fatigue of Au, Cu, and PCC in Power LED Packages
    (MDPI, 2023)
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    Bond wire failure, primarily wire neck breakage, in power LED devices due to thermomechanical fatigue is one of the main reliability issues in power LED devices. Currently, the standard testing methods to evaluate the device’s lifetime involve time-consuming thermal cycling or thermal shock tests. While numerical or simulation methods are used as convenient and quick alternatives, obtaining data from material lifetime models with accurate reliability and without experimental fatigue has proven challenging. To address this issue, a mechanical fatigue testing system was developed with the purpose of inducing mechanical stresses in the critical region of the bond wire connection above the ball bond. The aim was to accelerate fatigue cracks at this bottleneck, inducing a similar failure mode as observed during thermal tests. Experimental investigations were conducted on Au, Cu, and Pd-coated Cu bonding wires, each with a diameter of 25 µm, using both low- and high-frequency excitation. The lifetime of the wire bond obtained from these tests ranged from 100 to 1,000,000 cycles. This proposed testing method offers material lifetime data in a significantly shorter timeframe and requires minimal sample preparation. Additionally, finite element simulations were performed to quantify the stresses at the wire neck, facilitating comparisons to conventional testing methods, fatigue test results under various operating conditions, material models, and design evaluations of the fine wire bond reliability in LED and microelectronic packages.
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    Daylight defect detection in PV modules using narrow bandpass filters
    (SPIE, 2026-10-12)
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    Benkö, Lukas J.
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    Kern, Martin
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    Grasel, Bernhard
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    Wolfgang, Matthias
    Daylight electroluminescence (dEL) and photoluminescence (dPL) imaging enable outdoor inspection of photovoltaic (PV) module defects, but their performance is limited by the intense solar background. The current study investigates the influence of narrow optical bandpass filters on SWIR-based dEL and dPL imaging of silicon PV modules. Three narrow bandpass filter configurations near the silicon luminescence peak and the corresponding atmospheric water vapor absorption band, with different bandwidths ranging from 10 nm to 50 nm, were selected to systematically vary the balance between EL signal transmission and solar irradiance suppression. The filters were spectrally characterized and evaluated for solar background suppression, luminescence signal transmission, and defect visibility under outdoor illumination. Outdoor measurements up to ~590 W/m² showed that a narrow bandpass filter near the atmospheric water vapor absorption maximum effectively balances solar background suppression and luminescence signal transmission, enabling reliable defect visibility in both dEL and dPL without lock-in amplification. While dEL is most effective for resolving fine defect structures, dPL provides strong contrast for extended inactive cell areas, indicating that the combined use of both methods offers the most comprehensive defect assessment. These findings highlight the importance of optical filter selection for robust daylight luminescence imaging of PV modules.