Hanreich, GernotGernotHanreichBychikhin, SergeySergeyBychikhinPogany, DionyzDionyzPoganyMarso, MichelMichelMarsoKordos, PeterPeterKordosNicolics, JohannJohannNicolics2016-03-172016-03-172005In: Electronics technology : meeting the challenges of electronics technology progress, 15-160-7803-9325-2http://hdl.handle.net/20.500.11790/15428th international seminar on electronics technology, May 19-20, 2005We study the self-heating effect in a high-power AlGaN/GaN High Electron Mobility Transistor (HEMT) grown on silicon. We determine the HEMT static channel temperature using a dc characterization method and the results are compared with values calculated with a two-dimensional thermal model. No experimental data on the dynamic thermal behavior are available until now. For this reason, the transient thermal response on current pulses in the sub-microsecond range is estimated theoretically by means of a three-dimensional thermal model.eninfo:eu-repo/semantics/closedAccessAluminum gallium nitrideElectronic packaging thermal managementGallium nitrideHEMTsMODFETsTemperatureThermal loadingThermal resistanceThin film sensorsThin film transistorsinfo:eu-repo/semantics/bookPart10.1109/ISSE.2005.14909902-s2.0-33745467543