Czerny, BernhardBernhardCzerny0000-0001-8147-3122Nagl, BernhardBernhardNaglLederer, MartinMartinLedererTrnka, A.A.TrnkaKhatibi, GoltaGoltaKhatibiThoben, MarkusMarkusThoben2021-10-302021-10-302012-04-162012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE978-146731512-8https://ieeexplore.ieee.org/document/6191724http://hdl.handle.net/20.500.11790/1661The subject of this investigation was determination of thermo-mechanically induced displacement of the components inside a power module under operation conditions. It is well known that lifetime of insulated gate bipolar transistor (IGBT) modules is limited by thermo-mechanical fatigue. Wire bonded interconnects inside the IGBTs count as critical sites where crack initiation and failure is observed. In this study the temperature dependent periodic deformation of wire-bonds under operating conditions was determined by using a laser Doppler vibrometer (LDV) and thermal imaging camera. Furthermore finite element analyses (FEA) were conducted to obtain the strain values needed for lifetime assessments.enKonferenzbeitrag10.1109/ESimE.2012.6191724